Forum Discussion
Altera_Forum
Honored Contributor
15 years agoThank-you for the reply, BadOmen.
I guess the key comment in one of the attached is: >>>>Because DDR SDRAM memories incur a penalty when switching banks or rows, >>>>performance improves when they are accessed sequentially using bursts. Your comments were: >>>>I'm getting around 97% efficiency out of it. To max out the throughput you have to >>>>sequentially access it. If you randomly access it I think I was seeing an efficiency >>>>between 33-40% (I forget off the top of my head). So, would that mean that 97% is worst case read or write using sequential accesses using bursts? So, would that mean that you are at 97% and not 100% only because of throughput degradation when eventually switching banks or rows(once at the end of a row say) and it is only at this point that we see the local_ready signal toggle? Else where does this degrade from 100% and under what circumstances would we see the local_ready signal toggle? I will code something up shortly to test. Thanks again.