Dear Chee,
thanks for your reply.
"Since the 3.3V LVTTL buffer used in silicon is the same, the min./max. guard band should be the same for 4mA and 8mA."
Is "Should" proven by device characterization? If same electrical performance for LVTTL buffer at 4 and 8mA is given, why it is not documented by datasheet?
"Kindly reference the table 20's Vol and Voh values for 8mA as well."
I've reviewed all relevant tables of latest device datasheet (683794 | 2022.10.31), but couldn't find any specification for output voltage levels at load condition of 8mA with regards to LVTTL.
Best regards
Frank