New Contributor
New Contributor Hi Intel team,
As this is fabrication defect found in the samples ,so can you provide the CN for scarp the 3pcs in your side ? By the way ,can we return the defects to you side when the components has the” GET_ROMMON” failure in
the further ?We believe it is helpful for you to investigate, thanks!
Device #2 and #3:
Device #2 and #3 failed functional tests at low temperatures. Additional characterization showed:
• Device#2 failed transceiver output buffer test and transceiver ICDR (Interpolator Clock Data
Recovery) speed test at 25°C and 0°C.
• Device#3 failed transceiver output buffer test and transceiver ICDR (Interpolator Clock Data
Recovery) speed test at 0°C only.
ICC values of both ERMA devices are comparable to factory standard device, this rules out an electrical
overstress damage (EOS) as cause of functional failures.
The devices failure was believed to be caused by a random defect. Such a defect is introduced into the
devices during the wafer fabrication process, and can cause a latent failure. This kind of fabrication defect
is random in nature, and does not pose any concern for reliability of other devices.
