Forum Discussion
problems find when simulate UniPHY + DDR2
- 6 years ago
Hi Xiaoqiang Shen,
UniPHY simulation does not adhere to the initialization timing to speed up the simulation so it will fail when using the Micron memory model. I assume the simulation passes with the DDR2 example design with Intel generated memory model. As a workaround, you can comment out the initialization time check in the Micron memory model.
Hope this helps.
Thanks,
Rashmi
Hi Xiaoqiang Shen,
UniPHY simulation does not adhere to the initialization timing to speed up the simulation so it will fail when using the Micron memory model. I assume the simulation passes with the DDR2 example design with Intel generated memory model. As a workaround, you can comment out the initialization time check in the Micron memory model.
Hope this helps.
Thanks,
Rashmi
1) Actually it’s defined the tINIT = 200us when launch this UniPHY IP. The parameter is also compliant with Micron datasheet. Why UniPHY IP doesn’t consider it as it knows exact memory parameter.
2) If you look at my first question attachments, you will see UniPHY IP doesn't follow memory initialization sequence. For example: cke should stay 200us when power up.