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Altera_Forum
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14 years ago

Cyclone IV & 2xDDR2 connection

Hi,

I am not very familiar with DDR components and I don’t want to miss anything or make errors in my design. I try to follow the cyclone III dev kit schematic (TPS51100 to generate Vref and Vtt for example) but it uses external terminations and I don't have much place on my board.

components :

=> Cyclone IV EP4CE30 (1 DDR <-> bank 3 & 4 // 1 DDR <-> bank 7 & 8)

=> 2xDDR2 MT47H32M16-25E

fpga side :

VCCIO : +1.8V (bank3,4,7,8)

- rup2 : 49.9Ohm pull-up to +1.8V / rdn2 : 49.9Ohm pull-down to GND

- rup4 : 49.9Ohm pull-up to +1.8V / rdn4 : 49.9Ohm pull-down to GND

- point to point connected to DDR2 devices

pinout parameters :

- IO standard = SSTL 18 class I

- output termination = series 50ohm with calibration (dq, dqs)

- assignment/timings verified by compilation

ddr2 controller parameters (hpc2) :

- memory drive strength setting = reduced

- memory ODT setting = 50 ohms

- memory format = discrete device

Do I miss something ?

Do I have to connect FPGA Vref IO (VREFBxNy) to DDR Vref (0.9V) ?

Do I have to add series resistor on ADDR / command signals and parallel resistor between differential ck/ck_n ?

Thanks for helping.

SG

1 Reply

  • Altera_Forum's avatar
    Altera_Forum
    Icon for Honored Contributor rankHonored Contributor

    --- Quote Start ---

    Hi,

    I am not very familiar with DDR components and I don’t want to miss anything or make errors in my design. I try to follow the cyclone III dev kit schematic (TPS51100 to generate Vref and Vtt for example) but it uses external terminations and I don't have much place on my board.

    components :

    => Cyclone IV EP4CE30 (1 DDR <-> bank 3 & 4 // 1 DDR <-> bank 7 & 8)

    => 2xDDR2 MT47H32M16-25E

    fpga side :

    VCCIO : +1.8V (bank3,4,7,8)

    - rup2 : 49.9Ohm pull-up to +1.8V / rdn2 : 49.9Ohm pull-down to GND

    - rup4 : 49.9Ohm pull-up to +1.8V / rdn4 : 49.9Ohm pull-down to GND

    - point to point connected to DDR2 devices

    pinout parameters :

    - IO standard = SSTL 18 class I

    - output termination = series 50ohm with calibration (dq, dqs)

    - assignment/timings verified by compilation

    ddr2 controller parameters (hpc2) :

    - memory drive strength setting = reduced

    - memory ODT setting = 50 ohms

    - memory format = discrete device

    Do I miss something ?

    Do I have to connect FPGA Vref IO (VREFBxNy) to DDR Vref (0.9V) ?

    Do I have to add series resistor on ADDR / command signals and parallel resistor between differential ck/ck_n ?

    Thanks for helping.

    SG

    --- Quote End ---

    e-mail me bekrenyov@mail.ru